TetraMem Inc., a Silicon Valley–based semiconductor company developing analog in-memory computing (IMC) solutions, today announced the successful tape-out, manufacturing, and initial silicon ...
TetraMem Inc. today announced that its academic and research collaborators have demonstrated RRAM (memristor) devices capable of reliable operation at temperatures up to 700°C, marking a major advance ...
This study is led by Ying Zhang (doctoral student, Institute of Microelectronics, Chinese Academy of Sciences) and Dr. Xiaolong Zhao (postdoctor, School of Microelectronics, University of Science and ...
The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of RRAM (resistive random-access memory) ...
Non-volatile memory is an important component in a wide range of high-performance embedded applications. Especially, many consumer, industrial, and medical applications need increased re-writability ...
The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of RRAM (resistive random-access memory) ...
(A) This is an illustration of the RRAM array with each memory cell comprising of one filament (sandwiched between two electrodes). In comparison to the surrounding insulator matrix, a number of ...
Leuven, Belgium – October 14, 2008 – In order to explore solutions to overcome the scaling limitations of conventional Flash memory cells, IMEC has started new research activities on resistive RAM ...
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